Waveguide-coupled detector in zero-change complementary metal–oxide–semiconductor

We report a waveguide-coupled photodetector realized in a standard CMOS foundry without requiring changes to the process flow (zero-change CMOS). The photodetector exploits carrier generation in the silicon-germanium normally utilized as stressor in pFETs. The measured responsivity and 3 dB bandwidth are of 0.023 A/W at a wavelength of 1180 nm and 32 GHz at −1 V bias (18 GHz at 0 V bias). The dark current is less than 10 pA and the dynamic range is larger than 60 dB.United States. Defense Advanced Research Projects Agency. Photonically Optimized Embedded Microprocessors Program (Award HR0011-11-C-0100)United States. Defense Advanced Research Projects Agency. Photonically Optimized Embedded Microprocessors Program (Contract HR0011-11-9-0009

40 Gbit/s silicon-organic hybrid (SOH) phase modulator

A 40 Gbit/s electro-optic modulator is demonstrated. The modulator is based on a slotted silicon waveguide filled with an organic material. The silicon organic hybrid (SOH) approach allows combining highly nonlinear electro-optic organic materials with CMOS-compatible silicon photonics technology